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Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Système International)

Nick Fletcher, Gert Rietveld, James Olthoff, and Ilya Budovsky, “Predicted impact of latest h and e values on resistance and voltage traceability in the new SI (Système International)”,
Proceedings of the 2014 Conference on Precision Electromagnetic Measurements (CPEM 2014), Rio de Janeiro, Brasil, pp. 432 – 433 (2014).

Abstract:
This paper considers the impact of the planned redefinition of the SI on electrical traceability, with a focus on resistance and voltage calibration. The new SI will replace the 1990 values for the critical constants RK and KJ. With the present state of experimental data, we can say with good confidence that the required relative changes will be of order the 2 × 10-8 for RK and 10 × 10-8 for KJ. These changes will only be visible for a small number of top-level standards in NMIs and industry. Thus, no disruption in traceability is anticipated due to this change, and this paper is part of a communication campaign by the CCEM to ensure a smooth transition.

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